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S. A. Malyshev

National Academy of Sciences of Belarus

12

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19

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Comparative analysis of frequency and noise characteristics of Fabry – Perot and distributed feedback laser diodes with external optical injection locking

2015 Quantum Electronics
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Infrared and auger spectra of dysprosium silicate films

2011 Journal of Applied Spectroscopy
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Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes

2006 Semiconductors
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DEEP DEFECT LEVELS IN DIODE STRUCTURES BASED ON GALLIUM PHOSPHIDE

2006 Journal of Applied Spectroscopy
- I. A. Bocharova
- S. A. Malyshev
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How the photoluminescence of submicron epitaxial n^+-n-i structures of III-V compounds depends on their electrophysical characteristics

2005 Journal of Optical Technology
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Photoluminescence of the n+‐n‐i Submicron Structures of Gallium Arsenide

2001 Journal of Applied Spectroscopy
- Yu. S. Emel'yanenko
- S. A. Malyshev
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Photoluminescence of layered SiO2-InP structures

2001 Journal of Optical Technology
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The Spectrum of Deep Levels in the InP Schottky Barrier

2000 Journal of Applied Spectroscopy
- I. A. Bocharova
- S. A. Malyshev
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Composition and charge properties of Al/Ti–SiO2–InP (100) structures

1998 Solid-state Electronics
- S. A. Malyshev
- N. V. Babushkina
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Characterization of InP:Zn Layers by Photoluminescence and Photoelectrochemical C-V Profiling

1998
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