A new direct low-k/Cu dual damascene (DD) contact lines for low-loss (LL) CMOS device platforms

A new direct low-k/Cu dual damascene (DD) contact line has been developed for low loss (low parasitic capacitance and low resistance) CMOS device platforms by on-current BEOL technologies. The excellent low contact resistance is realized in the low-k pre-metal-dielectrics (PMD) with a reduced aspect ratio, achieving 5.4 Omega for 75 nmphi contact which is only 1/4 relative to a conventional W-plug. The CMOS active performance was improved with no reliability degradation, featuring in cost-effective RF/ubiquitous applications.