ArF step-and-scan system with 0.75 NA for the 0.10μm node

It is widely expected that 193 nm lithography will be the technology of choice for volume production of the 0.10 micrometer device generation. For this purpose the PAS5500/1100 TM Step & Scan system, the second generation ArF tool, was developed. It is based on the PAS5500/900 TM , the body of which has been adapted to fit the new 0.75 NA Starlith TM projection optics. This high NA enables mass manufacturing of devices following the 0.10 micrometer design rule. The system features a 10 W 2 kHz ArF laser and the AERIAL TM II illuminator that can be equipped with a QUASAR TM (multipole) option. In order to minimize wafer processing influences on overlay performance ATHENA TM off- axis alignment with phase modulator is implemented. The usage of Reticle Blue Alignment will further improve overlay as well as increase the system stability. In this paper the PAS5500/1100 TM system layout is discussed and the first imaging and overlay results are presented. Imaging performance is illustrated by SEM pictures of 0.10 micrometer dense lines, 0.15, 0.13 and 0.12 micrometer dense contact holes, 0.10 micrometer DRAM isolation patterns, image plane deviation and system distortion fingerprints. Alignment reproducibility and single machine overlay results demonstrate the overlay capability.