YBaCuO thin films deposited by ion beam sputtering assisted by implantation of: O, Ne, Ar, Cu, Kr, Xe and Ba

Abstract -Amorphous thin films of YBaCuO are prepared, at room temperature, by ion beam sputter deposition (Kaufman source) assisted by energetic (150 KeV) ion implantation of O, Ne, Ar, Cu, Kr, Xe, and Ba. Influence of the atomic mass of the incoming ions on the stoichiometry, density and dynamic sputtering process is studied. Stoichiometry is measured by RBS. Density and sputtered thickness are measured by grazing X ray reflectometry.