High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology

We have developed a dual metal gate CMOS technology with HfSi x for nMOS and Ru for pMOS on HfO 2 gate dielectric. These gate stacks show high mobility (100% of universal mobility for electron, 80% for hole at high fields) down to T inv of 1.7 nm and symmetrical low V t equivalent to poly-Si/SiO 2 . As a result, high drive currents of 780 muA/mum and 265 muA/mum at I off = 1 nA/mum are achieved for V dd = 1.0 V in L g = 60 nm nMOS and pMOS, respectively We have applied the mobility enhancement technology to the Ru/HfO 2 pMOS by utilizing (110)-substrate. As a result, an excellent drive current of 400 muA/mum (151% improvement over (100)-p + poly-Si/SiO 2 ) is achieved