Epitaxial magnetic tunnel junctions with a low barrier height spinel MgGa 2 O 4

Hiroaki Sukegawa,Y. Kato,Mohamed Belmoubarik,P.-H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuzo Kamiguchi,Junichi Ito,H. Yoda,T. Ohkubo,Seiji Mitani,K. Hono

Epitaxial magnetic tunnel junctions with a low barrier height spinel MgGa 2 O 4

2017

Hiroaki Sukegawa
Y. Kato
Mohamed Belmoubarik
P.-H. Cheng
Tadaomi Daibou
Naoharu Shimomura
Yuzo Kamiguchi
Junichi Ito
H. Yoda
T. Ohkubo
Seiji Mitani
K. Hono

MgO barrier based magnetic tunnel junctions (MTJs) have drawn great attention because of their important spintronic device applications such as read heads of hard disk drives and non-volatile magnetoresistive random access memories (MRAMs).

Keywords:

Epitaxy
Sputtering
Magnetoresistance
Spinel
Spintronics
Condensed matter physics
Materials science
Photonic crystal

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