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P.-H. Cheng

National Institute for Materials Science

7

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Development of a barrier material with a low barrier height for magnetic tunnel junctions: MgGa 2 O 4 spine oxide

2017 The Japan Society of Applied Physics
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Investigation of spin-dependent transports and microstructure in NiMnSb-based magnetoresistive devices

2017 Applied Physics Letters
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Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

2016 Applied Physics Letters
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