Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application

Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.