Effect of precursor structure on Cu(InGa)Se2 formation by reactive annealing

Abstract Precursor structures of Mo/CuGa/In, Mo/In/CuGa, Mo/In/CuGa/In and Mo/CuGaIn were prepared on thin sodium-free glass by the sputtering of CuGa and In targets. In-situ phase evolution of precursors with temperature was investigated by a high-temperature X-ray diffraction system, which verified the existence and transformation of several intermetallics: Cu 2 In, Cu 11 In 9 , Cu 3 Ga, Cu 7 In 3 , Cu 9 Ga 4 and Cu 16 In 9 as well as elemental In. MoSe 2 layers produced during selenization were detected by scanning electron microscope and X-ray diffraction, with their thicknesses varying by precursor structure. Adhesion strength of Cu(InGa)Se 2 to each Mo layer was assessed by applying CdS chemical bath deposition process to each sample.