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Gigahertz photodetectors fabricated in heteroepitaxial Ge-on-Si for use in integrated receivers
Gigahertz photodetectors fabricated in heteroepitaxial Ge-on-Si for use in integrated receivers
2003
Robert E. Jones
Shawn G. Thomas
Sushil Bharatan
Rainer Thoma
Craig Jasper
Thomas E. Zirkle
Ginger Edwards
Ran Liu
Xiang-Dong Wang
Qianghua Xie
C. Rosenblad
Juergen Ramm
Giovanni Isella
Hans von Känel
Jungwoo Oh
Joe C. Campbell
Keywords:
Ion implantation
Surface roughness
Photodetector
Quantum efficiency
Electronic engineering
Band gap
Dark current
Integrated circuit
Optoelectronics
Materials science
Equivalent circuit
Correction
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