High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

 Abstract— We report for the first time high-frequency microwave noise performance on 0.17-µm-gate In0.17Al0.83N/GaN high- electron-mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363mS/mm, an unity current gain cut-off frequency (fT) of 64GHz and a maximum oscillation frequency (fmax(U)/fmax(MSG)) of 72/106GHz. The product fmax(U)×Lg=12.24GHz·µm is the highest value ever reported for InAlN/GaN HEMTs on Si substrate. At Vd=4V and Vg=-2.25V, the device exhibited a minimum noise figure (NFmin) of 1.16 dB for 10GHz and 1.76dB for18GHz.Small variation of NFmin (<0.5dB) from 8% to 48% of IDmax (100-636 mA/mm) was observed. Index Terms—InAlN/GaN, GaN-on-Silicon, HEMT, NFmin, Cut-off frequency, Maximum Oscillation frequency, linearity. I. INTRODUCTION