Sputtered MoS2 layer as a promoter in the growth of MoS2 nanonanoflakes by TCVD

In the present study, sputtered molybdenum disulfide (MoS2) layer, by RF magnetron sputtering, as a promoter on SiO2/Si substrate is utilized before depositing of MoS2 nanoflakes by thermal chemical vapor deposition (TCVD). By comparing the samples with and without the promoter layer, it is found that this layer increases nucleation sites for growing the nanoflakes and enhances the quality of them. In addition this layer affects the growth direction so that it induces dominant nanoflakes vertically grown instead of horizontally ones. Indeed, sputtering of the promoter layer announced a significant improvement in the morphology, thickness and resistance of the grown MoS2 nanoflakes by TCVD. This approach is suitable for application in electronics, photovoltaic cells and optoelectronic devices.