Kevin P. Martin

Universitat Politècnica de Catalunya

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H. P. Gillis

University of Cambridge

D. A. Choutov

Atlanta Technical College

Michael J. Vojtesak

University of Nebraska–Lincoln

Gregory Myles

University of Edinburgh

Michael T. Gilford

Kenneth T. Douglas

University of Colorado Boulder

M.B. Christopher

University of California, Los Angeles

Jon T. Moore

Independence Community College

Víctor Martínez-Quiroga

Universitat Politècnica de Catalunya

Thomas A. Winningham

Health First

Cooperative Institutions

BOKU University

Ludwig Boltzmann Institute for Digital Health and Prevention

Georgia Institute of Technology

Gregor Mendel Institute of Molecular Plant Biology

Institute of Molecular Biotechnology

University of Colorado Boulder

Massachusetts Institute of Technology

MIT Lincoln Laboratory

Universitat Politècnica de Catalunya

Tufts University

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Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma

Journal of Electronic Materials (1997)

H. P. Gillis D. A. Choutov Kevin P. Martin M. D. Bremser R. F. Davis

Dry etching

Plasma Etching

10.1007/s11664-997-0168-7

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Citations (28)

Turbulent Thermal Counterflow of Helium II in Large Circular Channels.

PhDT (1982)

Kevin P. Martin

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Scalable Multi Dimensional Threat Analysis

Dalton S. Tapply John A. Baia Peter A. Leondires Kevin P. Martin

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Application of the ANT assessment methodology for validating LOCUST 1.2 thermal-hydraulic code

Nuclear Engineering and Design (2024)

Kevin P. Martin Max Casamor Víctor Martínez-Quiroga Marina Pérez-Ferragut Ju Zhongyun

Nuclear power plants play a critical role in providing clean and sustainable energy. Ensuring the safety of these plants is of utmost importance to the nuclear industry. In this regards, thermal-hydraulic computer codes are essential for the simulation and understanding of the behavior during both normal and accidental conditions. In this context, LOCUST 1.2 is a newly developed thermal-hydraulic code by China General Nuclear, which aims at simulating the steady-state and accidental behavior of HPR-1000, a Pressurized Water Reactor design. This paper presents the validation of LOCUST 1.2 using the Advanced Nuclear Technologies assessment methodology from the Universitat Politècnica de Catalunya. The validation focuses on a nodalization created for the Large Scale Test Facility from the Japan Atomic Emergency Agency. In particular, four tests from the OECD/NEA ROSA 1 and 2 projects were selected. The selected tests encompass scenarios such as Anticipated Transient Without Scram, Intermediate Break Loss-Of-Coolant Accident, Steam Generator Tube Rupture, and Main Steam Line Breaks. The ANT-UPC methodology provides a comprehensive phenomenological assessment combining qualitative and quantitative analyses with the help of Best Estimate Plus Uncertainty calculations. All four tests are divided in phenomena through a Phenomena Identification and Ranking Tables (PIRT) to then perform the assessment of each phenomena individually, finally yielding an assessment matrix. Due to length constraints, this article only presents the detailed description of four key phenomena. However, the full PIRT table together with the assessment for each phenomenon is provided. The overall findings indicate that LOCUST 1.2 demonstrates a good capability to accurately reproduce most of the phenomenology observed in all four tests.

Thermal hydraulics

Pressurized water reactor

10.1016/j.nucengdes.2024.113410

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The dry etching of group III-nitride wide-bandgap semiconductors

JOM (1996)

H. P. Gillis D. A. Choutov Kevin P. Martin

Dry etching

Stoichiometry

Wide-bandgap semiconductor

10.1007/bf03223028

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Citations (25)

Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

MRS Proceedings (1998)

H. P. Gillis M.B. Christopher Kevin P. Martin D. A. Choutov

Dry etching

Stoichiometry

10.1557/proc-537-g8.2

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Citations (1)

Validity of the semiclassical interpretation of resonant magnetotunneling spectroscopy experiments

Physical review. B, Condensed matter (1994)

Timothy B. Boykin R. E. Carnahan Kevin P. Martin

According to the semiclassical interpretation of resonant-magnetotunneling-spectroscopy experiments, a plot of the resonant-tunneling-diode (current) peak bias versus transverse magnetic field should give (after appropriate scaling of the axes) the zero-field E(${\mathbf{k}}_{\mathrm{\ensuremath{\parallel}}}$) dispersion relations for the quantum well of the device. Here we derive a general criterion for the validity of this interpretation. We find that, in most devices, for carriers tunneling a distance ${\mathit{z}}_{0}$ into a quantum well of width w, so long as the ratio \ensuremath{\lambda}=w/${\mathit{z}}_{0}$ is sufficiently small the semiclassical interpretation is justified, the error being at worst of order \ensuremath{\lambda}, but usually only of order ${\ensuremath{\lambda}}^{2}$.

Semiclassical physics

10.1103/physrevb.50.15393

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VI. Applications of S-layers

FEMS Microbiology Reviews (1997)

Uwe B. Sleytr Hagan Bayley Margit Sára Andreas Breitwieser Seta Küpcü

The wealth of information existing on the general principle of S-layers has revealed a broad application potential. The most relevant features exploited in applied S-layer research are: (i) pores passing through S-layers show identical size and morphology and are in the range of ultrafiltration membranes; (ii) functional groups on the surface and in the pores are aligned in well-defined positions and orientations and accessible for binding functional molecules in very precise fashion; (iii) isolated S-layer subunits from many organisms are capable of recrystallizing as closed monolayers onto solid supports at the air-water interface, on lipid monolayers or onto the surface of liposomes. Particularly their repetitive physicochemical properties down to the subnanometer scale make S-layers unique structures for functionalization of surfaces and interfaces down to the ultimate resolution limit. The following review focuses on selected applications in biotechnology, diagnostics, vaccine development, biomimetic membranes, supramolecular engineering and nanotechnology. Despite progress in the characterization of S-layers and the exploitation of S-layers for the applications described in this chapter, it is clear that the field lags behind others (e.g. enzyme engineering) in applying recent advances in protein engineering. Genetic modification and targeted chemical modification would allow several possibilities including the manipulation of pore permeation properties, the introduction of switches to open and close the pores, and the covalent attachment to surfaces or other macromolecules through defined sites on the S-layer protein. The application of protein engineering to S-layers will require the development of straightforward expression systems, the development of simple assays for assembly and function that are suitable for the rapid screening of numerous mutants and the acquisition of structural information at atomic resolution. Attention should be given to these areas in the coming years.

Surface Engineering

Surface Modification

Molecular engineering

Protein Engineering

10.1111/j.1574-6976.1997.tb00306.x

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Citations (67)

Cost analysis of compliant wafer level package

C.S. Patel M. Realff Samuel Merriweather C. Power Kevin P. Martin

Low cost package solutions are required by the semiconductor industry to meet the growing demand of high performance and high functionality in electronic products. In particular, the International Technology Roadmap for Semiconductors (ITRS) projects the package cost per pin to be as low as (0.30-1.26 cents) in 1999 to (0.27-0.93 cents) in 2005 to (0.24-0.68 cents) in 2011. To satisfy this need, a Compliant Wafer Level Package (CWLP) technology has been developed that: (a) packages all of the ICs intact on the wafer at once, and (b) fabricates all of the compliant Input/Output (I/O) connections monolithically in one step. Using discrete event simulations, a detailed manufacturing cost model for the CWLP is described. In contrast to the conventional packages where the cost of the package increases with the I/O count, the CWLP cost is independent of the I/O count because all of the I/Os are monolithically fabricated in one step. For 6-inch wafers and throughput greater than 50,000 wafers per year, the manufacturing cost of the CWLP is computed to be $26.65 per wafer. The percent contributions of the material, equipment and labor to the total cost is calculated to be 87%, 9%, and 4%, respectively.

Semiconductor device fabrication

Manufacturing cost

Wafer testing

Integrated circuit packaging

Semiconductor device modeling

Wafer-level packaging

10.1109/ectc.2000.853437

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SWANEA (Southwest Asia-Northeast Africa) A Climatological Study. Volume 3. The Near East Mountains

Kenneth R. Walters Michael J. Vojtesak Kevin P. Martin Gregory Myles Michael T. Gilford

Abstract : This volume, the third in a four-volume series, is a climatological study of the Near East Mountains: an area that includes Turkey (except for its Mediterranean and Aegean Sea coasts), Northern Iraq, Iran (except for its Persian Gulf and Arabian Sea coasts), Afghanistan, and Pakistan. After describing the general geography of land areas in the Near East Mountains, it discusses major meteorological features of the entire study area. Each major subregion (based on 'climatic commonality') is then broken into its own geography and general weather sections. Finally, the four so-called 'seasons' in each of these subregions are discussed in detail.

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