An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
Transition-edge sensors (TESs) are sensitive devices for detecting photons from millimeter radiation to gamma rays. Their photon counting efficiency and collecting area benefit from large-array multiplexing scheme, and therefore the development of multiplexing readout system has been an important topic in this field. Among the many multiplex techniques, time-division multiplexing (TDM) superconducting quantum interference device (SQUID) has been used most widely for TES readout. In this work, we design a Configurable Ultra-Low Noise Current Source (CLCS) for TES characterization and as a part of a whole TDM-TES bias control system. The CLCS is based on the feedback structure of ultra-low noise instrumentation amplifiers and low-noise, high-resolution (20 bits) digital-to-analog converter (DAC). CLCS has an ultra-high resolution of 10 nA in the 0 to 5 mA current output range, and can perform current-voltage (IV) sweep and bias-step tests to measure key TES parameters on board. The feedback structure of the CLCS also avoids the issue of impedance mismatch.
Mathematical models for the calculation of sidewall surface roughness have been developed for focused ion beam (FIB) sputtering. The surface roughness profile at the sidewall was different to the bottom surface profile for the same sputtering parameters and substrate material. The cumulative sputtering by the Gaussian beam creates a steady state surface profile at the sidewall which has been used to develop surface roughness models. The ion intensity distribution profile was considered to be Gaussian. The beam function includes ion type, ion acceleration voltage, beam radius, tailing and neighbouring of the successive beams. Knowing the beam radius and pixel spacing, sidewall surface roughness of FIB sputtered microfeatures can be calculated using these models. The substrate material function has no direct effect on the sidewall surface profile if the same material is used for the study of beam profile and fabrication of microfeatures.
2D perovskites stabilized by alternating cations in the interlayer space (ACI) GA(MA) 3 Pb 3 I 10 perovskite have achieved a power conversion efficiency (PCE) of exceeding 18%. However, the potential leakage of broken cells with the usage of lead is still an environment problem. Thus, developing recycling end‐of‐life products via cost‐effective and environmentally friendly strategies is the current mainstream trend for perovskite solar cells. In this study, potential lead‐free alternatives to ACI 2D GA(MA) 3 M 3 I 10 perovskites with high optoelectronic and photovoltaic performance by replacing lead with metals such as Cd, Cu, Ge, Ni, Sn, Zn, Ca, Si, Fe, Mg, Sr, Ba, and Pd using first‐principles calculations are explored. The findings reveal that Cu, Zn, and Mg can finely tune the bandgap of GA(MA) 3 M 3 I 10 within the optimum range (0.9–2.3 eV) required for photovoltaic applications. GA(MA) 3 Cu 3 I 10 exhibits the strongest carrier transport ability, with the highest carrier mobility of 479.7 cm 2 V −1 s −1 . GA(MA) 3 Mg 3 I 10 demonstrates the highest PCE of 23.6%, positioning itself as a promising photoabsorber candidate for photovoltaic applications. Findings not only contribute to the design of environmentally friendly, high‐efficiency ACI 2D perovskites, but also unveil a mechanism that is not experimentally detected.
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