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C. Potier
C. Potier
University of Limoges
Electronic engineering
Optoelectronics
Engineering
High-electron-mobility transistor
Electrical engineering
9
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60
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Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
2018
Microelectronics Reliability
M. Oualli
C. Dua
O. Patard
P. Altuntas
S. Piotrowicz
Piero Gamarra
C. Lacam
Jean-Claude Jacquet
L. Teisseire
D. Lancereau
E. Chartier
C. Potier
Sylvain Delage
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First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
2018
INMMC | Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits
C. Potier
S. Piotrowicz
O. Patard
Piero Gamarra
P. Altuntas
E. Chartier
C. Dua
J-C. Jacquet
C. Lacam
Nicolas Michel
M. Oualli
Sylvain Delage
C. Chang
J. Gruenenpuett
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Citations (2)
InAlGaN/GaN HEMT technology for Ka band applications
2018
International Conference on Microwaves, Radar & Wireless Communications
Sylvain Delage
S. Piotrowicz
O. Patard
J-C. Jacquet
P. Gamarra
C. Dua
P. Altuntas
Nicolas Michel
E. Charier
C. Potier
M. Oualli
C. Lacam
C. Chang
H. Blanck
Philippe Fellon
D. Floriot
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Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S -parameters
2015
International Journal of Microwave and Wireless Technologies
C. Potier
Jean-Claude Jacquet
C. Dua
Audrey Martin
M. Campovecchio
M. Oualli
O. Jardel
S. Piotrowicz
Sylvain Laurent
R. Aubry
O. Patard
P. Gamarra
Marie-Antoinette di Forte-Poisson
Sylvain Delage
R. Quere
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Citations (11)
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