InAlGaN/GaN HEMT technology for Ka band applications

Sylvain Delage,S. Piotrowicz,O. Patard,J-C. Jacquet,P. Gamarra,C. Dua,P. Altuntas,Nicolas Michel,E. Charier,C. Potier,M. Oualli,C. Lacam,C. Chang,H. Blanck,Philippe Fellon,D. Floriot

InAlGaN/GaN HEMT technology for Ka band applications

2018

Sylvain Delage
S. Piotrowicz
O. Patard
J-C. Jacquet
P. Gamarra
C. Dua
P. Altuntas
Nicolas Michel
E. Charier
C. Potier
M. Oualli
C. Lacam
C. Chang
H. Blanck
Philippe Fellon
D. Floriot

Recent results obtained using InAlGaN/GaN HEMT technology. Material advantages of this heterostructure are depicted and some technological aspects are described. Low lagging effects and high electric field capability is presented. Power densities up to 10W.mm −1 have been obtained at 30GHz. MMIC power amplifiers are briefly reported.

Keywords:

Amplifier
Heterojunction
Logic gate
Gallium nitride
Electric field
High-electron-mobility transistor
Electronic engineering
Ka band
Monolithic microwave integrated circuit
Materials science
Optoelectronics

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