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Michael D. Craven

University of California, Santa Barbara

23

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679

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Review—The Physics of Recombinations in III-Nitride Emitters

2020 ECS Journal of Solid State Science and Technology
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Thermal droop in high-quality InGaN LEDs

2019 Applied Physics Letters
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Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap

2019 Physical review applied
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Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells

2017 Applied Physics Letters
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Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

2016 Applied Physics Letters
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Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells

2004 Applied Physics Letters
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Citations (107)
Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy

2003 Journal of Applied Physics
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Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition

2003 Japanese Journal of Applied Physics
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Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates

2001 Applied Physics Letters
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Citations (41)
Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells]

2000
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