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James S. Speck

University of California, Santa Barbara
University of California
Massachusetts Institute of Technology

1322

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Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

2021 Semiconductor Science and Technology
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Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells.

2021 arXiv: Applied Physics
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Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length including Random Alloy Fluctuations in (In, Ga) N and (Al, Ga) N Single Quantum Wells

2021 Physical review applied
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Thermal management strategies for gallium oxide vertical trench-fin MOSFETs

2021 Journal of Applied Physics
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Three-dimensional modeling of minority carrier lateral diffusion length in InGaN blue/green and AlGaN ultraviolet C single quantum wells including random alloy fluctuations.

2021 arXiv: Applied Physics
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High internal quantum efficiency of long wavelength InGaN quantum wells

2021 Applied Physics Letters
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Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs

2021 Applied Physics Letters
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Electron-phonon scattering in β-Ga2O3 studied by ultrafast transmission spectroscopy

2021 Applied Physics Letters
- Saulius Marcinkevicius
- James S. Speck
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Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field

2021
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Modeling dislocation-related reverse bias leakage in GaN p-n diodes

2021 Semiconductor Science and Technology
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