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Ronny Kern
Ronny Kern
Infineon Technologies
Materials science
Composite material
Optoelectronics
Electronic engineering
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5
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28
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Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
2016
Materials Science Forum
Roland Rupp
Werner Schustereder
Tobias Hoechbauer
Ronny Kern
Michael Dr. Rüb
Constantin Csato
Florian Krippendorf
Shavkat Akhmadaliev
Johannes von Borany
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A method of manufacturing a semiconductor device with a Schottky
2015
Jens Peter Konrath
Ulrich Schmid
Laura Stöber
Ronny Kern
Stefan Krivec
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SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
2015
Materials Science Forum
Tobias Höchbauer
Mario Leitner
Ronny Kern
Matthias Kunle
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Performance of a 650V SiC Diode with Reduced Chip Thickness
2012
Materials Science Forum
Roland Rupp
Rolf Gerlach
Uwe Kirchner
Andreas Schlögl
Ronny Kern
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Citations (17)
Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
2010
Materials Science Forum
Jochen Hilsenbeck
Michael Treu
Roland Rupp
Kathrin Rüschenschmidt
Ronny Kern
Matthias Holz
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Citations (6)
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