A method of manufacturing a semiconductor device with a Schottky

A semiconductor device comprising an n-doped monocrystalline semiconductor substrate (110) having a substrate surface (111), an amorphous n-type semiconductor surface layer (113) on the substrate surface (111) of n-doped, monocrystalline semiconductor substrate (110), and a Schottky junction forming material ( 151) in contact with the amorphous n-type semiconductor surface layer (113), wherein the Schottky junction forming material (151) forming at least one Schottky contact with the amorphous n-type semiconductor surface layer (113).