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Vladimir Machkaoutsan
Vladimir Machkaoutsan
Qualcomm
Transistor
Electronic engineering
Logic gate
AND gate
Metal gate
7
Papers
66
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Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery
2018
IMW | International Memory Workshop
Alessio Spessot
Neha Sharan
Hyungrock Oh
Romain Ritzenthaler
Eugenio Dentoni Litta
Barry O’Sullivan
Arindam Mallik
An De Keersgieter
Bertrand Parvais
Yasser Sherazi
Vladimir Machkaoutsan
Cheolgyu Kim
Pierre C. Fazan
Dan Mocuta
Anda Mocuta
Naoto Horiguchi
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Citations (5)
CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits
2018
Japanese Journal of Applied Physics
Eugenio Dentoni Litta
Romain Ritzenthaler
Tom Schram
Alessio Spessot
B.J. O'Sullivan
Vladimir Machkaoutsan
Pierre C. Fazan
Yunhyuck Ji
Geert Mannaert
Christophe Lorant
Farid Sebaai
A. Thiam
Monique Ercken
Steven Demuynck
Naoto Horiguchi
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Citations (4)
Coupe métallique à auto-alignement et trou d'interconnexion dans un traitement de fabrication finale (beol) de semi-conducteurs, et appareil associé
2016
Vladimir Machkaoutsan
Stanley Seungchul Song
John Jianhong Zhu
Junjing Bao
Jeffrey Junhao Xu
Mustafa Badaroglu
Matthew Michael Nowak
Choh fei Yeap
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Formation de finfet à base de silicium-germanium par condensation de ge
2014
Jeffrey Junhao Xu
Vladimir Machkaoutsan
Kern Rim
Stanley Seungchul Song
Choh fei Yeap
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