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Diego C. Ruiz
Diego C. Ruiz
ETH Zurich
Optoelectronics
High-electron-mobility transistor
Materials science
Electronic engineering
Analytical chemistry
8
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27
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Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs
2020
IEEE Electron Device Letters
Daxin Han
Diego C. Ruiz
Giorgio Bonomo
Tamara Saranovac
Olivier Ostinelli
Colombo R. Bolognesi
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Gate Recess Etch Sensitivity of Thick and Highly-Doped GaInAs Cap Layer in InP HEMT Fabrication
2020
Daxin Han
Diego C. Ruiz
Tamara Saranovac
Olivier Ostinelli
Colombo R. Bolognesi
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Impact Ionization Control in 50 nm Low-Noise High-Speed InP HEMTs with InAs Channel Insets
2019
IEDM | International Electron Devices Meeting
Diego C. Ruiz
Tamara Saranovac
Daxin Han
Olivier Ostinelli
Colombo R. Bolognesi
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InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
2019
IEEE Transactions on Electron Devices
Diego C. Ruiz
Tamara Saranovac
Daxin Han
Anna Hambitzer
Akshay M. Arabhavi
Olivier Ostinelli
Colombo R. Bolognesi
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New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs
2019
Diego C. Ruiz
Tamara Saranovac
Daxin Han
Olivier Ostinelli
Colombo R. Bolognesi
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