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T. J. Yim
T. J. Yim
Samsung
Time-dependent gate oxide breakdown
Electronic engineering
Robustness (computer science)
Materials science
Interconnection
2
Papers
4
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0
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High performance Cu/low-k interconnect strategy beyond 10nm logic technology
2015
IITC | International Interconnect Technology Conference
R.-H. Kim
Byung-hee Kim
Jinseok Kim
Jang-Hee Lee
Jongmin Baek
J.H. Hwang
J.W. Hwang
J. Chang
S.Y. Yoo
T. J. Yim
K.-M. Chung
Kang-Wook Park
T. Oszinda
I. S. Kim
E.B. Lee
Sang-don Nam
S. Jung
Y.W. Cho
Hyunjun Choi
Jang-ho Kim
Sanghoon Ahn
S. H. Park
B. U. Yoon
J.-H. Ku
S.S. Paak
Nae-in Lee
Seungwook Choi
H.K. Kang
Eunseung Jung
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Superior Cu fill with highly reliable Cu/ULK integration for 10nm node and beyond
2013
IEDM | International Electron Devices Meeting
T. Matsuda
Jong-Jin Lee
K. H. Han
Ki-Tae Park
J.O. Cha
Jongmin Baek
T. J. Yim
Dong-chan Kim
Do-Sun Lee
Jangheon Kim
S. Choi
E.B. Lee
Sang-don Nam
Hun-kyu Lee
Y.W. Cho
Insoo Kim
B. H. Kwon
Sanghoon Ahn
J.-H. Yun
Byung-hee Kim
B. U. Yoon
J.S. Hong
Nae-in Lee
Sung Je Choi
Hyon-Goo Kang
E. S. Chung
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Citations (4)
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