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Ivan C. Robin
Ivan C. Robin
United States Atomic Energy Commission
Molecular beam epitaxy
Chemistry
Analytical chemistry
Crystallography
Ellipsometry
5
Papers
20
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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission
2017
Physica Status Solidi (a)
Saiful Alam
Suresh Sundaram
Xin Li
Miryam E. Jamroz
Youssef El Gmili
Ivan C. Robin
Paul L. Voss
Jean-Paul Salvestrini
Abdallah Ougazzaden
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Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells
2017
Physica Status Solidi (a)
Saiful Alam
Suresh Sundaram
Helge Haas
Xin Li
Youssef El Gmili
Miryam E. Jamroz
Ivan C. Robin
Paul L. Voss
Jean-Paul Salvestrini
Abdallah Ougazzaden
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Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)
2010
Journal of Crystal Growth
G. Badano
Ivan C. Robin
B. Amstatt
F. Gemain
X. Baudry
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Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)
2010
Journal of Electronic Materials
G. Badano
Patrice Gergaud
Ivan C. Robin
X. Baudry
Benoît Amstatt
Fréderique Gemain
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Citations (11)
In Situ Spectroscopic Ellipsometry of Rough Surfaces: Application to CdTe(211)B/Ge(211) Grown by Molecular-Beam Epitaxy
2009
Journal of Electronic Materials
G. Badano
X. Baudry
Ivan C. Robin
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Citations (2)
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