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J. Zhao
J. Zhao
Texas Instruments
Silicide
Engineering
Dopant
Electronic engineering
Optoelectronics
3
Papers
31
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Nickel SALICIDE technology for sub-100nm CMOS devices
2004
J. P. Lu
Donald S. Miles
A. Li-Fatou
Y. Xu
J. Zhao
April Gurba
A. J. Griffin
B. Hornug
M. Hewson
T. Grider
D. Mercer
C. Montgomery
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Citations (2)
Dopant redistribution and loss during ternary silicide Co/sub x/Ni/sub 1-x/Si/sub 2/ formation
2003
ASMC | Advanced Semiconductor Manufacturing Conference
Y.Q. Xu
J. Zhao
J.P. Lu
D. S. Miles
J. Loewecke
P. Tiner
Xia Dong
S W Novak
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A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length
2002
IEDM | International Electron Devices Meeting
Jiong-Ping Lu
Donald S. Miles
J. Zhao
April Gurba
Y. Xu
C. Lin
M. Hewson
J. Ruan
L. Tsung
R. Kuan
T. Grider
D. Mercer
C. Montgomery
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Citations (28)
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