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D. Mercer
D. Mercer
Texas Instruments
Electronic engineering
Dopant
Salicide
CMOS
Silicide
5
Papers
39
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Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
2006
IWJT | International Workshop on Junction Technology
Jiong-Ping Lu
Donald S. Miles
Juanita Deloach
Duofeng Yue
Peijun J. Chen
T. Bonifield
Sue E. Crank
Shaofeng Yu
Freidoon Mehrad
Yaw S. Obeng
D.A. Ramappa
D. Corum
Richard L. Guldi
Lance S. Robertson
X. Liu
Lindsey H. Hall
Yuqing Xu
B.Y. Lin
A.F.Jr. Griffin
F.S. Johnson
T. Grider
D. Mercer
C. Montgomery
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Citations (3)
A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length
2002
IEDM | International Electron Devices Meeting
Jiong-Ping Lu
Donald S. Miles
J. Zhao
April Gurba
Y. Xu
C. Lin
M. Hewson
J. Ruan
L. Tsung
R. Kuan
T. Grider
D. Mercer
C. Montgomery
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Citations (28)
The role of boron segregation and transient enhanced diffusion on reverse short channel effect
1996
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
C. Machala
R. Wise
D. Mercer
Amitava Chatterjee
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