Old Web
English
Sign In
Acemap
>
authorDetail
>
F. E. Mamouni
F. E. Mamouni
Vanderbilt University
Electronic engineering
Silicon on insulator
MOSFET
Physics
Silicon
5
Papers
47
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Effects of fin width on memory windows in FinFET ZRAMs
2010
DRC | Device Research Conference
En Xia Zhang
Daniel M. Fleetwood
M. L. Alles
Ronald D. Schrimpf
F. E. Mamouni
W. Xiong
S. Cristoloveanu
Show All
Source
Cite
Save
Citations (8)
Effects of fin width on memory windows in FinFET ZRAMs
2009
ISDRS | International Semiconductor Device Research Symposium
En Xia Zhang
Daniel M. Fleetwood
F. E. Mamouni
M. L. Alles
Ronald D. Schrimpf
W. Xiong
S. Cristoloveanu
Show All
Source
Cite
Save
Citations (0)
Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs
2009
IEEE Transactions on Nuclear Science
Ivan S. Esqueda
Hugh J. Barnaby
Michael Lee McLain
Philippe C. Adell
F. E. Mamouni
S. K. Dixit
Ronald D. Schrimpf
W. Xiong
Show All
Source
Cite
Save
Citations (23)
Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors
2007
IEEE Transactions on Nuclear Science
Dakai Chen
F. E. Mamouni
X. J. Zhou
Ronald D. Schrimpf
Daniel M. Fleetwood
K.F. Galloway
Sungchul Lee
H Seo
Gerald Lucovsky
Bongim Jun
John D. Cressler
Show All
Source
Cite
Save
Citations (16)
1