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S. Koveshnikov
S. Koveshnikov
SEMATECH
Electronic engineering
Resistive random-access memory
Computer science
Voltage
Tungsten
4
Papers
47
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Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V
2012
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
D. C. Gilmer
S. Koveshnikov
B. Butcher
G. Bersuker
A. Kalantarian
M. G. Sung
Robert E. Geer
Yoshio Nishi
P. D. Kirsch
R. Jammy
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Citations (4)
Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM
2012
IMW | International Memory Workshop
D. C. Gilmer
G. Bersuker
S. Koveshnikov
Minseok Jo
A. Kalantarian
B. Butcher
Robert E. Geer
Yoshio Nishi
P. D. Kirsch
Raj Jammy
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Citations (11)
Real-time study of switching kinetics in integrated 1T/ HfO x 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time
2012
IEDM | International Electron Devices Meeting
S. Koveshnikov
K. Matthews
K. Min
D. C. Gilmer
M. G. Sung
S. Deora
H.-F. Li
S. Gausepohl
P. D. Kirsch
R. Jammy
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Citations (12)
High endurance performance of 1T1R HfO x based RRAM at low (<20μA) operative current and elevated (150°C) temperature
2011
IIRW | International Integrated Reliability Workshop
B. Butcher
S. Koveshnikov
D. C. Gilmer
G. Bersuker
M. G. Sung
A. Kalantarian
C. S. Park
Robert E. Geer
Yoshio Nishi
P. D. Kirsch
R. Jammy
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Citations (20)
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