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J. Maier
J. Maier
Pennsylvania State University
Electronic engineering
Physics
Optoelectronics
Gallium arsenide
Experimental data
2
Papers
44
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Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs
2015
IEDM | International Electron Devices Meeting
Rahul Pandey
Nidhi Agrawal
Varistha Chobpattana
K. Henry
M. Kuhn
Huichu Liu
Michael LaBella
Chad M. Eichfeld
Ke Wang
J. Maier
Susanne Stemmer
S. Mahapatra
Suman Datta
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Citations (7)
Demonstration of In 0.9 Ga 0.1 As/GaAs 0.18 Sb 0.82 near broken-gap tunnel FET with I ON =740μA/μm, G M =70μS/μm and gigahertz switching performance at V Ds =0.5V
2013
IEDM | International Electron Devices Meeting
R. Bijesh
Huichu Liu
Himanshu Madan
Dheeraj K. Mohata
W. Li
Nhan V. Nguyen
David J. Gundlach
Curt A. Richter
J. Maier
Ke Wang
T. Clarke
J. M. Fastenau
Dmitri Loubychev
W K Liu
V. Narayanan
Suman Datta
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Citations (37)
1