Demonstration of In 0.9 Ga 0.1 As/GaAs 0.18 Sb 0.82 near broken-gap tunnel FET with I ON =740μA/μm, G M =70μS/μm and gigahertz switching performance at V Ds =0.5V

We demonstrate high frequency switching characteristics of TFETs based on the In 0.9 Ga 0.1 As/GaAs 0.18 Sb 0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (I ON ) of 740μA/μm, intrinsic RF transconductance (G M ) of 700μS/μm, and a cut-off frequency (F T ) of 19GHz at V DS =0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.