Old Web
English
Sign In
Acemap
>
authorDetail
>
Kyunghoon Min
Kyunghoon Min
Materials science
Chemical vapor deposition
NMOS logic
Selectivity
Etching
3
Papers
1
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
塩素ガスエッチングを用いた微細MOS Elevated Source/Drainプロセス : 高選択,ダメージフリーのバッチ処理Siエッチング(研究会推薦論文,半導体材料・デバイス)
2008
hayasi kokorozasi sugino
Unsoon Kim
Kyunghoon Min
Ning Cheng
Huaqiang Wu
Chungho Lee
Fred Cheung
Hiroyuki Kinoshita
masahiko uenisi
hisasi katou
singo tada
takasi itou
Show All
Source
Cite
Save
Citations (0)
塩素ガスエッチングを用いた微細MOS Elevated Source/Drainプロセス : 高選択、ダメージフリーのバッチ処理Siエッチング
2008
SDM | SIAM International Conference on Data Mining
sugino hayasi kokorozasi
Unsoon Kim
Kyunghoon Min
Ning Cheng
Huaqiang Wu
Chungho Lee
Fred Cheung
Hiroyuki Kinoshita
uenisi masahiko
katou hisasi
tada singo
itou takasi
Show All
Source
Cite
Save
Citations (0)
New Elevated Source/Drain for NMOS Process Using Chlorine Gas Etching : Batch Type Si Etching with Damage Free and Very High Selectivity
2006
IEICE technical report. Speech
Rinji Sugino
Unsoon Kim
Kyunghoon Min
Ning Cheng
Huaqiang Wu
Chungho Lee
Fred Cheung
Hiro Kinoshita
Masahiko Kaminishi
Hitoshi Kato
Shingo Tada
Takashi Ito
Show All
Source
Cite
Save
Citations (1)
1