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Ming T. Lee
Ming T. Lee
United Microelectronics Corporation
Optoelectronics
Electronic engineering
Negative-bias temperature instability
Dielectric
Threshold voltage
5
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95
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Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
2002
Japanese Journal of Applied Physics
Chuan-Hsi Liu
Ming T. Lee
Chih-Yung Lin
Jenkon Chen
Y. T. Loh
Fu-Tai Liou
Klaus Schruefer
Anastasios A. Katsetos
Zhijian Yang
Nivo Rovedo
Terence B. Hook
Clement Hsingjen Wann
Tze-Chiang Chen
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Citations (43)
A Decoupled Capacitance Measurement Technique for Characterization of Small-Geometry MOSFETs with Ultra-Thin Gate Oxides
2001
The Japan Society of Applied Physics
Chuan-Hsi Liu
Ming T. Lee
Yao-Chin Cheng
Jenkon Chen
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Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
2001
The Japan Society of Applied Physics
Chuan H. Liu
Ming T. Lee
Chih-Yung Lin
Jenkon Chen
Klaus Schruefer
Thomas Schiml
Anastasios A. Katsetos
Zhijian Yang
Nivo Rovedo
Terence B. Hook
Clement Hsingjen Wann
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Citations (10)
Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics
2001
IEDM | International Electron Devices Meeting
Chuan H. Liu
Ming T. Lee
Chin Yung Lin
Jenkon Chen
Klaus Schruefer
James Brighten
Nivo Rovedo
Terence B. Hook
Mukesh V. Khare
Shih-Fen Huang
Clement Wann
Tze Chiang Chen
Tak H. Ning
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Citations (42)
New experimental findings on SILC and SBD of ultra-thin gate oxides
1999
IIRW | International Integrated Reliability Workshop
M.G. Chen
Chuan H. Liu
Ming T. Lee
K. Y. Fu
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