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mutou hatizou
mutou hatizou
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Si(111)基板上に作製した3C‐SiC薄膜のダブルポジショニングバウンダリーの低減
2004
kusunoki mori tuyosi
mutou hatizou
okada masahisa
Jin P
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PLAD法によるワイドギャップ半導体エピタキシャル薄膜の作製 I. ダイヤモンド薄膜
2004
mutou hatizou
kamiya sin'itirou
asano takasi
kusunoki mori tuyosi
Jin P
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