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J. C. Oberlin

Centre national d'études des télécommunications

15

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194

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Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system

1994 Thin Solid Films
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Preparation of copper thin films at ambient temperature by microwave plasma‐enhanced chemical vapor deposition from the copper (II) acetylacetonate‐argon‐hydrogen system

1991 Journal of Applied Physics
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Silicide formation in metal/Si structures and diffusion barrier properties of CVD tungsten films

1989 Journal of Materials Research
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The influence of an aluminum overlayer on the interaction of tungsten films with silicon substrates

1988 Journal of Vacuum Science & Technology B
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Characterization of the silicon‐on‐insulator material formed by high‐dose oxygen implantation using spectroscopic ellipsometry

1987 Journal of Applied Physics
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Effective elastic constants of thin‐film tungsten‐silicide from surface acoustic wave analysis

1987 Applied Physics Letters
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Comparison of the Behaviour of Arsenic During Titanium and Tungsten Disilicide Formation

1987 ESSDERC | European Solid-State Device Research Conference
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Correlation between the elastic and structural properties of thin‐film tungsten silicide layers from surface acoustic wave analysis

1987 Applied Physics Letters
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Defects created by self-implantation in Si as a function of temperature and fluence

1986 Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
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Irreversible and reversible annealing of paramagnetic oxygen vacancies (E′1 centers) in oxygen‐implanted amorphous SiO2

1984 Journal of Applied Physics
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Citations (34)