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Hans-J. Gossmann
Hans-J. Gossmann
Agere Systems
Materials science
Silicon
Annealing (metallurgy)
Analytical chemistry
Gate dielectric
6
Papers
20
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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
2004
Journal of Electronic Materials
Peide D. Ye
G. D. Wilk
B. Yang
J. Kwo
Hans-J. Gossmann
M. Frei
J. P. Mannaerts
M. Sergent
M. Hong
K.K. Ng
J. Bude
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Citations (14)
Transient-enhanced diffusion in shallow-junction formation
2002
Journal of Electronic Materials
Anthony T. Fiory
S.G. Chawda
S. Madishetty
Vishal Mehta
N. M. Ravindra
S.P. McCoy
M.E. Lefrancois
K.K. Bourdelle
J. M. McKinley
Hans-J. Gossmann
A. Agarwal
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Citations (3)
Implantation and Annealing Strategies for Ultra-Shallow Junction Formation
1999
The Japan Society of Applied Physics
Aditya Agarwal
Hans-J. Gossmann
A. T. Fiory
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