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Lu Fang-Liang
Lu Fang-Liang
Analytical chemistry
Physics
Ion
Epitaxy
low noise
4
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First Vertically Stacked Tensily Strained Ge 0.98 Si 0.02 nGAAFETs with No Parasitic Channel and L G = 40 nm Featuring Record I ON = 48 μA at V OV =V DS =0.5V and Record G m,max (μS/μm)/SS SAT (mV/dec) = 8.3 at V DS =0.5V
2019
Tu Chien-Te
Huang Yu Shiang
Lu Fang-Liang
Liu Hsiao-Hsuan
Lin Chung-Yi
Liu Yi-chun
Chunxu Liu
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First Stacked Ge 0.88 Sn 0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at V OV =V DS = -0.5V, Record G m,max of 172μS at V DS = -0.5V, and Low Noise
2019
Huang Yu Shiang
Tsai Chung-En
Tu Chien-Te
Ye Hung-Yu
Liu Yi-chun
Lu Fang-Liang
Chunxu Liu
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CVD成長させたGe/strained Ge_0 91Sn_0 0.09/Ge量子井戸p‐MOSFETの記録的な高移動度(428cm~2/V s)【Powered by NICT】
2016
Huang Yu Shiang
Huang Chih-Hsiung
Lu Fang-Liang
Lin Chung-Yi
Ye Hung-Yu
Wong I-Hsieh
Jan Sun-Rong
Lan Huang-Siang
Chunxu Liu
Huang Yi-Chiau
Chung Hua
Chang Chorng-Ping
S Chu Schubert
Kuppurao Satheesh
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選択的レーザアニーリングによるソース/ドレインドーパント回復を用いたV_ov=V_ds=1V,SS=95mV/dec,高I_on/I_off=2×10~6と減少した雑音パワー密度での同時I_on=1235μA/μmの高性能Ge無接合ゲートオールアラウンドNFETs【Powered by NICT】
2016
Wong I-Hsieh
Lu Fang-Liang
Huang Shih-Hsien
Ye Hung-Yu
Lu Chun-Ti
Yan Jhih-Yang
Shen-Yu Cheng
Peng Yu-Jiun
Lan Huang-Siang
Chen Liu
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