Old Web
English
Sign In
Acemap
>
authorDetail
>
Ye Hung-Yu
Ye Hung-Yu
Ion
Epitaxy
low noise
Chemical substance
Science, technology and society
3
Papers
0
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
First Stacked Ge 0.88 Sn 0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at V OV =V DS = -0.5V, Record G m,max of 172μS at V DS = -0.5V, and Low Noise
2019
Huang Yu Shiang
Tsai Chung-En
Tu Chien-Te
Ye Hung-Yu
Liu Yi-chun
Lu Fang-Liang
Chunxu Liu
Show All
Source
Cite
Save
Citations (0)
CVD成長させたGe/strained Ge_0 91Sn_0 0.09/Ge量子井戸p‐MOSFETの記録的な高移動度(428cm~2/V s)【Powered by NICT】
2016
Huang Yu Shiang
Huang Chih-Hsiung
Lu Fang-Liang
Lin Chung-Yi
Ye Hung-Yu
Wong I-Hsieh
Jan Sun-Rong
Lan Huang-Siang
Chunxu Liu
Huang Yi-Chiau
Chung Hua
Chang Chorng-Ping
S Chu Schubert
Kuppurao Satheesh
Show All
Source
Cite
Save
Citations (0)
選択的レーザアニーリングによるソース/ドレインドーパント回復を用いたV_ov=V_ds=1V,SS=95mV/dec,高I_on/I_off=2×10~6と減少した雑音パワー密度での同時I_on=1235μA/μmの高性能Ge無接合ゲートオールアラウンドNFETs【Powered by NICT】
2016
Wong I-Hsieh
Lu Fang-Liang
Huang Shih-Hsien
Ye Hung-Yu
Lu Chun-Ti
Yan Jhih-Yang
Shen-Yu Cheng
Peng Yu-Jiun
Lan Huang-Siang
Chen Liu
Show All
Source
Cite
Save
Citations (0)
1