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M.J. Wang

TSMC

3

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A high density cylinder-type MIM capacitor integrated with advanced 28nm logic High-K/Metal-Gate process for embedded DRAM

2012 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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A high-performance low-power highly manufacturable embedded DRAM technology using backend hi-k MIM capacitor at 40nm node and beyond

2011 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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A high-performance, high-density 28nm eDRAM technology with high-K/metal-gate

2011 IEDM | International Electron Devices Meeting
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