A high-performance, high-density 28nm eDRAM technology with high-K/metal-gate

This paper presents industry's smallest 0.035um 2 high performance embedded DRAM cell with cylinder-type Metal-Insulator-Metal (MIM) capacitor and integrated into 28nm High-K Metal Gate (HKMG) logic technology. This eDRAM memory features an HKMG CMOS compatible (low-thermal low-charging process) high-K MIM capacitor with extreme low leakage (<0.1fA/cell). Access transistor with HKMG shows excellent driving capability (>50uA/cell) with <1fA/cell leakage in 28nm cell and <3fA/cell in 20nm cell (0.021um 2 ). We demonstrate first functional silicon success of 28nm eDRAM macro. 600/550 MHz operating frequency is achieved at typical/worse cases.