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Wen-Tse Hsieh

National Cheng Kung University

18

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229

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Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

2002 Journal of Electronic Materials
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Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

2002 IEEE Transactions on Electron Devices
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Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides

2001 Electronics Letters
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Cubic Single-Crystalline Si1 − x − y C x N y Films with Mirror Face Prepared by RTCVD

2001 Electrochemical and Solid State Letters
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An a-SiGe:H phototransistor integrated with a Pd film on glass substrate for hydrogen monitoring

2000 IEEE Transactions on Electron Devices
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To suppress dark current of high temperature β-SiC/Si optoelectronic devices with porous silicon substrate

2000 Electronics Letters
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A High-Temperature β-SiC Bulk-Barrier Phototransistor with High Optical-Gain and Temperature Optical Current

1998
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Novel SiC/Si heterostructure negative-differential-resistance diode for use as switch with high on/off current ratio and low power dissipation

1998 IEEE Electron Device Letters
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A high optical-gain /spl beta/-SiC bulk-barrier phototransistor for high-temperature applications

1998 IEEE Photonics Technology Letters
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High-responsivity porous-SiC thin-film pn junction photodetector

1998 Electronics Letters
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Citations (14)