Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

Cubic crystalline silicon-carbon nitride (Si1−x−yCxNy) films have been grown successfully using various carbon sources by rapid-thermal chemical-vapor deposition (RTCVD). The characteristics of the Si1−x−yCxNy films grown with SiH3CH3, C2H4, and C3H8 are examined and compared by x-ray photoelectron spectroscopy (XPS) spectra, scanning electron microscopy (SEM) images, and transmission electron microscopy (TEM) patterns. The XPS spectra show that the differences of chemical composition and chemical-bonding state are co-related to the C bonding type of the different carbon source. The SEM images and TEM analysis indicate that the better Si1−x−yCxNy film can be obtained using C3H8 gas as the carbon source. In addition, correlations between the growing stages to the microstructure of the cubic-crystalline Si1−x−yCxNy films have been illustrated in detail.