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H.-H. Chen

National Taiwan Normal University

6

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132

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Enhancement-Mode GaN MOS-HEMT with Quaternary InAlGaN-Barrier

2017 Applied Mechanics and Materials
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Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

2017 VLSIT | Symposium on VLSI Technology
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Ferroelectric Al:HfO 2 negative capacitance FETs

2017 IEDM | International Electron Devices Meeting
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Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

2016 IEDM | International Electron Devices Meeting
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