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S.-Y. Chen

National Taiwan Normal University

4

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Steep switch-off of In 0.18 Al 0.82 N/AlN/GaN on Si MIS-HEMT

2018 ISNE | International Symposium on Next-Generation Electronics
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Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

2018 IEDM | International Electron Devices Meeting
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Ferroelectric Al:HfO 2 negative capacitance FETs

2017 IEDM | International Electron Devices Meeting
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