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Sora Han

Seoul National University

14

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402

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Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell

2012 Nanotechnology
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Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

2012 ACS Applied Materials & Interfaces
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The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

2011 Journal of Applied Physics
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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

2011 Applied Physics Letters
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Atomic layer deposition of TiO2 and Al‐doped TiO2 films on Ir substrates for ultralow leakage currents

2011 Physica Status Solidi-rapid Research Letters
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Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti(O-iPr)2(tmhd)2 on Ru or RuO2 Substrates

2011 Chemistry of Materials
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Electrical properties of TiO 2 -based MIM capacitors deposited by TiCl 4 and TTIP based atomic layer deposition processes

2011 Microelectronic Engineering
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Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

2011 Chemistry of Materials
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Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films

2011 Applied Surface Science
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Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

2010 Chemistry of Materials
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Citations (37)