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Eric Gerritsen

NXP Semiconductors

5

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Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM

2005 Solid-state Electronics
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Atomic layer deposition of dielectrics and electrodes for embedded-dram capacitor cells in 90 nm technology and beyond

2004
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Pre-alloying implants with indium as an enabling technology to extend titanium salicide towards 0.1-mm linewidths

1999 Microelectronic Engineering
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Spike anneal: RTP processing at reduced thermal budget with applications to TiSi 2 formation towards 0.1-mm linewidths

1999 Microelectronic Engineering
- Eric Gerritsen
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Thermal wave analysis of the formation of titanium disilicide on submicron lines

1996
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