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W.R. Jung
W.R. Jung
Samsung
Static random-access memory
Single crystal
Electronic engineering
cell technology
Thin film
3
Papers
5
Citations
0
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Novel 3-dimensional 46F/sup 2/ SRAM technology with 0.294um/sup 2/ S/sup 3/ (stacked single-crystal Si) cell and SSTFT (stacked single-crystal thin film transistor)
2004
ESSCIRC | European Solid-State Circuits Conference
Jae-Hoon Jang
Sung-Gon Jung
Y. H. Kang
Wooyoung Cho
J.H. Moon
Chadong Yeo
Kun-Ho Kwak
Byeong-In Choi
B.J. Hwang
W.R. Jung
Si-Hong Kim
J.H. Kim
J.H. Na
Hyun-Seok Lim
J.H. Jeong
Kinam Kim
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Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S3 (Stacked Single-crystal Si) Cell Technology
2004
The Japan Society of Applied Physics
Wooyoung Cho
Hyun-Seok Lim
Jae-Hoon Jang
Y. H. Kang
Jung Hwan Moon
Chadong Yeo
Kun-Ho Kwak
Byeong-In Choi
B.J. Hwang
W.R. Jung
Si-Hong Kim
Jung-hyeon Kim
J.H. Na
J.H. Jeong
Sung-Gon Jung
Kinam Kim
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Fabrication and characteristics of novel load PMOS SSTFT (Stacked Single-crystal Thin Film Transistor) for 3-Dimensional SRAM memory cell
2004
SOI | International SOI Conference
Y. H. Kang
Soon-Moon Jung
Jae-Hoon Jang
J.H. Moon
Won-Seok Cho
Chadong Yeo
Kun-Ho Kwak
Bonghyun Choi
B.J. Hwang
W.R. Jung
Sungjin Kim
Jong-Hyuk Kim
J.H. Na
Hoon Lim
Jae-Hun Jeong
Kinam Kim
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Citations (5)
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