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S. Hauguth
S. Hauguth
Condensed matter physics
Physics
Indium nitride
Heterojunction
Epitaxy
6
Papers
62
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Electron transport properties of indium oxide – indium nitride metal-oxide-semiconductor heterostructures
2008
Physica Status Solidi (c)
V. Lebedev
Ch. Y. Wang
S. Hauguth
V. M. Polyakov
Frank Schwierz
V. Cimalla
Th. Kups
F. M. Morales
J. G. Lozano
D. González
M. Himmerlich
J.A. Schaefer
S. Krischok
O. Ambacher
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Citations (6)
Characterization of GaN‐based lateral polarity heterostructures
2008
Physica Status Solidi (c)
Pierre Lorenz
V. Lebedev
Florentina Niebelschütz
S. Hauguth
O. Ambacher
J.A. Schaefer
S. Krischok
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Citations (3)
Novel III‐nitride based transparent photodetectors for standing wave interferometry
2008
Physica Status Solidi (a)
S. Hauguth
V. Lebedev
Ch. Mauder
Florentina Niebelschütz
H.-J. Büchner
Gerd Jäger
O. Ambacher
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Citations (2)
Coalescence aspects of III-nitride epitaxy
2007
Journal of Applied Physics
V. Lebedev
K. Tonisch
Florentina Niebelschütz
V. Cimalla
D. Cengher
I. Cimalla
Ch. Mauder
S. Hauguth
O. Ambacher
F. M. Morales
J. G. Lozano
D. González
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Citations (26)
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