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Jee Hoon Han
Jee Hoon Han
Samsung
Electronic engineering
Flash memory
Materials science
Engineering
Oxide
5
Papers
10
Citations
0
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Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
2006
The Japan Society of Applied Physics
Wookhyun Kwon
Jung Guen Jee
Jee Hoon Han
Jung In Han
Heon Kyu Lee
Bong Yong Lee
Sang-Pil Sim
Chan-Kwang Park
Kinam Kim
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A New Failure Mechanism of MLC NOR Flash Memory Caused by Aggravated Drain Disturb Due to Co-Salicidation Process
2006
IRPS | International Reliability Physics Symposium
Bong Yong Lee
Jee Hoon Han
Jung In Han
Sang-pil Sim
Wookhyun Kwon
Heon Kyu Lee
Yoon-Moon Park
Seung Boo Jeon
Kwang-Su Kim
Jae-hoon Kim
Wook Lee
Chan-Kwang Park
Kinam Kim
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Citations (2)
Fully 3-Dimensional NOR Flash Cell with Recessed Channel and Cylindrical Floating Gate - A Scaling Direction for 65nm and Beyond
2006
VLSIT | Symposium on VLSI Technology
Sang-pil Sim
Kwang-Soo Kim
Heon Kyu Lee
Jung In Han
Wook Hyim Kwon
Jee Hoon Han
Bong Yong Lee
Cheol Jung
Jeung Hwan Park
Dae-Joung Kim
Dae Hyun Jang
Woong Lee
Chan-Kwang Park
Kinam Kim
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Citations (7)
Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
2005
The Japan Society of Applied Physics
Wookhyun Kwon
Jung In Han
Bomsoo Kim
Chang-Ki Baek
Sang-pil Sim
Wook Lee
Jee Hoon Han
Cheol Jung
Heon Kyu Lee
Young Kwan Jang
Jeung Hwan Park
Dae Mann Kim
Chan-Kwang Park
Kinam Kim
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Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion
2005
ESSDERC | European Solid-State Device Research Conference
Sang-pil Sim
Wookhyun Kwon
Heon Kyu Lee
Jee Hoon Han
Seung Boo Jeon
Bong Yong Lee
Jae-hoon Kim
Jung In Han
Byoung-moon Yoon
Wook Lee
Chan-Kwang Park
Kinam Kim
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