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Ralf B Willecke
Ralf B Willecke
Texas Instruments
Silicon nitride
Dielectric
Dielectric strength
Materials science
Time-dependent gate oxide breakdown
2
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7
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Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect
2004
IITC | International Interconnect Technology Conference
Ting Y. Tsui
Phil Matz
Ralf B Willecke
Eden Zielinski
Tae Kim
Gaddi S. Haase
Joe W. McPherson
Abha Singh
Andrew J. McKerrow
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Citations (2)
Effects of silicon carbide composition on dielectric barrier Voltage Ramp and TDDB reliability performance
2003
IITC | International Interconnect Technology Conference
Ting Y. Tsui
Ralf B Willecke
Andrew J. McKerrow
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Citations (5)
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