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Karla Kuldová
Karla Kuldová
Materials science
Optoelectronics
Quantum well
Nitride
Metalorganic vapour phase epitaxy
5
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1
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0
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Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
2021
Semiconductor Science and Technology
František Hájek
Alice Hospodková
Pavel Hubik
Zuzana Gedeonová
Tomáš Hubáček
Jiri Pangrac
Karla Kuldová
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Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
2021
Journal of Luminescence
F. Hájek
Alice Hospodková
Tomáš Hubáček
Jiri Oswald
Jiri Pangrac
F. Dominec
R. Horešovský
Karla Kuldová
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Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
2021
Journal of Crystal Growth
Tomáš Vaněk
František Hájek
F. Dominec
Tomáš Hubáček
Karla Kuldová
Jiri Pangrac
Tereza Košutová
Pavel Kejzlar
Petr Bábor
Artur Lachowski
Alice Hospodková
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Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE
2020
Tomáš Vaněk
Tomáš Hubáček
František Hájek
Filip Dominec
Jiri Pangrac
Karla Kuldová
Jiri Oswald
Alice Hospodková
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MOVPE GaN/AlGaN HEMT NANO-STRUCTURES
2019
Eduard Hulicius
Karla Kuldová
Alice Hospodková
J. Pangrác
Filip Dominec
Josef Humlíček
I. Pelant
O. Cibulka
K. Herynkova
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